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ECORCE TCAD is a powerful tool for modeling and simulating the impact of radiation and other physical effects on electronic devices, particularly MOS transistors. It integrates advanced modeling tools like the Poisson equation, Heat equation, and carrier transport, while also offering an interface with Geant4 for handling complex particle profiles.

Practical examples for beginners can be found below, explaining these features and simulations in detail.

ECORCE TCAD

Diode Modeling

Calculate I=f(V) characteristic of a diode. Shows how easy it is to use ECORCE.

ECORCE TCAD

Modeling of Total Ionizing Dose

Display the shift of the Id=f(Vgs) characteristics of an academic N-MOSFET, after 100 krad, then after 400K annealing.

ECORCE TCAD

Interface Geant4

Highlight ECORCE capability to handle complex particle profile created by Geant4. The dynamic mesh of ECORCE is mandatory for this.

ECORCE TCAD

Ion Definition

Geant4 Compatible

The ions profiles are taken into account according to files generated by Geant4. Thus, the definition of the ions is done in a few clicks.

Physical Equations

Actually, ECORCE integrates 1D and 2D modelling of:

Poisson Equation (electrostatic)
Heat equation
Transport Equation for Electrons and Holes
Trapping-Untrapping Equations

ECORCE TCAD

NMOS Transistor Id=f(Vgs)

For ECORCE's beginners. Shows how to create a N-mosfet model and calculate the threshold voltage, OFF current and maximum transconductance.

ECORCE TCAD

N-MOS 20nm 30krad

For ECORCE's beginners. Shows how to model a dose rate with ECORCE and gives a first view of dose effects on N-MOSFET.

ECORCE TCAD

Nuclear reaction

The neutron impact generates 2 ions, He and Mg.

The mesh is adjusted along the modelling to take into account changes in potential and carriers densities.

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