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What We Do

ECORCE TCAD - Diode modeling

Calculate I=f(V) characteristic of a diode. Shows how easy it is to use ECORCE.

The challenge

ECORCE TCAD - Ion Definition

SRIM Compatible

The ions profiles are taken into account according to files generated by SRIM. Thus, the definition of the ions is done in a few clicks.

Physical Equations

Actually, ECORCE integrates 1D and 2D modelling of:

- Poisson Equation (electrostatic)
- Heat equation
- Transport Equation for Electrons and Holes
- Trapping-Untrapping Equations

The solution

ECORCE TCAD - Nuclear reaction

The neutron impact generates 2 ions, He and Mg. The mesh is adjusted along the modelling to take into account changes in potential and carriers densities.

The results

Modeling of Total Ionizing Dose

Display the shift of the Id=f(Vgs) characteristics of an academic N-MOSFET, after 100 krad, then after 400K annealing.

The solution

NMOS Transistor Id=f(Vgs)

For ECORCE's beginners. Shows how to create a N-mosfet model and calculate the threshold voltage, OFF current and maximum transconductance.

The results

N-MOS 20nm 30krad

For ECORCE's beginners. Shows how to model a dose rate with ECORCE and gives a first view of dose effects on N-MOSFET.

The results

ECORCE TCAD - Interface Geant4

Highlight ECORCE capability to handle complex particle profile created by Geant4. The dynamic mesh of ECORCE is mandatory for this.

Request a Free Trial License

Request a free evaluation in Contact page. We provide annual licenses for individual computers or full site.

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