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Physical model for enhanced interface-trap formation at low dose rates
Sergey N Rashkeev, Claude R Cirba, Daniel M Fleetwood, Ronald D Schrimpf, Steven C Witczak, Alain Michez, Sokrates T Pantelides, IEEE Transactions on Nuclear Science, 2002
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET
A Michez, J Boch, S Dhombres, F Saigné… - Microelectronics …, 2013 - Elsevier
ECORCE: A TCAD tool for total ionizing dose and single event effect modeling
A Michez, S Dhombres, J Boch - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
Étude d'un protocole de régénération thermique de composants électroniques soumis à un rayonnement ionisant
S Dhombres, 2015
TCAD simulations of leakage currents induced by SDRAM single-event cell degradation
A Rodriguez, F Wrobel, A Michez… - 2016 16th European …, 2016 - ieeexplore.ieee.org
TCAD prediction of dose effects on MOSFETs with ECORCE
A Michez, J Boch, J Dardié, F Wrobel… - 2017 17th European …, 2017 - ieeexplore.ieee.org
Study of synergistic effects in integrated circuits subjected to ionizing and neutral radiation in space
T Borel - 2018 - theses.hal.science
TCAD simulation of radiation-induced leakage current in 1T1C SDRAM
HT Nguyen, A Rodriguez, F Wrobel, A Michez… - Microelectronics …, 2018 - Elsevier
Gate grounded n-MOS sensibility to ionizing dose
T Borel, A Michez, S Furic, E Leduc… - 2018 18th European …, 2018 - ieeexplore.ieee.org
Total ionizing dose effect in LDMOS oxides and devices
T Borel, S Furic, E Leduc, A Michez… - IEEE Transactions on Nuclear Science, 2019 - ieeexplore.ieee.org
Thermal runaway in SiC Schottky barrier diodes caused by heavy ions
S Kuboyama, E Mizuta, Y Nakada… - IEEE Transactions on Nuclear Science, 2019 - ieeexplore.ieee.org
Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET
K Niskanen, AD Touboul… - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Etude expérimentale et modélisation des phénomènes de cellules fragilisées dans les DRAM en environnement radiative.
TH Nguyen - 2021 - theses.fr
Single Event Latchup: temperature effects, design parameters effects and mechanisms
S Guagliardo - 2021 - theses.fr
Neutron-induced failure dependence on reverse gate voltage for SiC power MOSFETs in atmospheric environment
K Niskanen, RC Germanicus, A Michez… - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org.
Predictive tools and" Radiation Hardening By Design"(RHBD)-SEL and Temperature Effects
Ygor Quadros de Aguiar - 2021 - theses.fr
Investigation of single event effects observed in SiC-SBDs
Y Nakada, E Mizuta, S Kuboyama, H Shindou - nishina.riken.jp
Single-event radiation effects in silicon carbide power MOSFETs
C Martinella - JYU dissertations, 2021 - jyx.jyu.fi
Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells
Cleiton M Marques, Frédéric Wrobel, Ygor Q Aguiar, Alain Michez, Frédéric Saigné, Jérôme Boch, Luigi Dilillo, Rubén García Alía, 2024, Electronics
Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation.
AFM-sMIM characterization of the recombination-enhancing buffer layer for bipolar degradation free SiC MOSFETs
Rosine Coq Germanicus, Tanguy Phulpin, Kimmo Niskanen, Alain Michez, Ulrike Lüders, 2024, Solid State Phenomena
Due to the expansion of defects like single Shockley-type Stacking Faults inside the SiC epitaxial drift layer, during high current stress, classical SiC MOSFETs can be victims of the degradation of their electrical characteristics. The introduction of an epitaxial SiC buffer layer between the substrate and the n-drift epilayer, called recombination-enhancing buffer layer, was shown to avoid this degradation. In this paper, TCAD simulations of the electrical behavior of such a commercial SiC MOSFET device with varying buffer layer thickness are studied, indicating only small modifications of the electrical characteristics. These simulations are combined with the characterization of the local electrical properties using an AFM-sMIM technique, allowing to determine the real thickness of the different layers of the device. These measurements highlight an inhomogeneous conductivity in the SiC substrate, being probably compensated by the introduction of the SiC buffer layer.
Ga-Free T2SL Infrared Detector Under Proton Irradiations: Identification of Dark Current Regimes.
Hassen Mezouar, Alain Michez, Clara Bataillon, Matthias Tornay, Philippe Christol, 2025, IEEE Transactions on Nuclear Science
The purpose of this work is to study the effects of proton irradiation on the dark current of InAs/InAsSb type-II superlattice (T2SL) midwave infrared barrier photodetectors. 60 MeV proton irradiation with fluence up to 8x1011 H+/cm² was applied to the detector maintained at its operating temperature of 150 K. A degradation of dark current is observed under proton irradiation due to displacement damage dose effects. Thanks to TCAD simulations, we identify the different dark current regimes. At high reverse voltage, the device is dominated by Fowler-Nordheim (FN) current and trap assisted tunneling (TAT).
Single Event Effects of SiC power MOSFETs: from neutron interaction to destruction at the die level
Rosine Coq Germanicus, Alain Michez, Kimmo Niskanen, Mahima Chaudhary, Guillaume Bascoul, Vanessa Chazal, Frederic Wrobel, Jerome Boch, 2025, IEEE Transactions on Nuclear Science
The impact of irradiation poses a significant barrier to the deployment of commercial off-the-shelf (COTS) Silicon Carbide (SiC) devices, such SiC MOSFETs, in harsh environments, such as space, avionics, and nuclear settings. Incident particles can induce secondary ion and generate, at the SiC die level, catastrophic events, such Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). With the goal of better elucidating the distinct stages occurring during irradiation, Technology Computer-Aided Design Single Event Effect (SEE) simulations of the SiC MOSFET, using ECORCE, were performed for both a heavy ion and a secondary ion created by neutron nuclear reactions. To more comprehensively account for all mechanisms linking particle interactions to device failure, the influence of two ion impact positions, beneath the gate and beneath the source, is evaluated.
Physical Explanation for the Higher Sensitivity to Ion-Induced Burnout in SiC Schottky Diodes Compared to Si Schottky Diodes
CM Marques, Alain Michez, Frédéric Wrobel, S Kuboyama, Frédéric Saigné, L Dillilo, YQ Aguiar, Rubén García Alía, 2025, IEEE Transactions on Nuclear Science
SiC has a higher critical electric field compared to Si, which is promising for power applications. However, the susceptibility of SiC Schottky barrier diodes (SBDs) to heavy ions is recognized as a critical issue due to Single Event Burnout (SEB) and Single Event Leakage Current (SELC). Despite extensive research, a comprehensive understanding of the main mechanisms underlying heavy ion-induced failures in SiC devices remains missing. This work compares the physical mechanisms in SiC and Si Schottky diodes using TCAD modeling. The results show that the high critical electric field, a key advantage of SiC devices, is also the primary factor behind their susceptibility to heavy ion irradiation. In Si diodes, impact ionization limits the electric field, reducing Joule heating and mitigating burnout risk.
Physics-Based Ion Track Structure Model for Single-Event Effect Simulations on Power Devices
Manami Iwata, Satoshi Kuboyama, Alain Michez, Akiko Makihara, Misa Takahashi, Norio Nemoto, Masahiko Midorikawa, Jérôme Boch, Frédéric Saigné, Frédéric Wrobel, Takahiro Makino, Takeshi Ohshima, Hiroyuki Shindou 2025 - IEEE Transactions on Nuclear Science
A physics-based ion track structure was successfully established for ions covering a wide LET range applicable to single-event effect simulations on power devices by modeling the power law profile, which was derived from Geant4 simulation with MicroElec extension. The collected charge in two different types of SiC diodes calculated by the device simulator ECORCE is in good agreement with the experimental results at the low bias condition.
SEU Cross-Section Estimation Using ECORCE TCAD Tool
Cleiton M Marques, Alain Michez, Frédéric Wrobel, Ygor Q Aguiar, Frédéric Saigné, Luigi Dilillo, Rubén García Alía - 2025 - Electronics
This work introduces an innovative approach for estimating the Single-Event Upset (SEU) cross-sections in Static Random-Access Memory (SRAM) devices, addressing challenges related to limited technological information and the complexity of Technology Computer-Aided Design (TCAD) simulations. The proposed methodology is designed to be accessible even to users without in-depth TCAD expertise, enabling a streamlined yet accurate SEU cross-section estimation. Using simplified mixed-modeling (TCAD-based 2D modeling with circuit-level SPICE simulations), this approach significantly reduces computational efforts while maintaining good correlation with experimental data. Furthermore, this study identifies key parameters that influence TCAD modeling accuracy and proposes strategies for approximating unknown parameters, enhancing the reliability of SEU cross-section predictions.
Physical model for enhanced interface-trap formation at low dose rates
Sergey N Rashkeev, Claude R Cirba, Daniel M Fleetwood, Ronald D Schrimpf, Steven C Witczak, Alain Michez, Sokrates T Pantelides, IEEE Transactions on Nuclear Science, 2002
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET
A Michez, J Boch, S Dhombres, F Saigné… - Microelectronics …, 2013 - Elsevier
ECORCE: A TCAD tool for total ionizing dose and single event effect modeling
A Michez, S Dhombres, J Boch - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
Étude d'un protocole de régénération thermique de composants électroniques soumis à un rayonnement ionisant
S Dhombres, 2015
TCAD simulations of leakage currents induced by SDRAM single-event cell degradation
A Rodriguez, F Wrobel, A Michez… - 2016 16th European …, 2016 - ieeexplore.ieee.org
TCAD prediction of dose effects on MOSFETs with ECORCE
A Michez, J Boch, J Dardié, F Wrobel… - 2017 17th European …, 2017 - ieeexplore.ieee.org
Study of synergistic effects in integrated circuits subjected to ionizing and neutral radiation in space
T Borel - 2018 - theses.hal.science
TCAD simulation of radiation-induced leakage current in 1T1C SDRAM
HT Nguyen, A Rodriguez, F Wrobel, A Michez… - Microelectronics …, 2018 - Elsevier
Gate grounded n-MOS sensibility to ionizing dose
T Borel, A Michez, S Furic, E Leduc… - 2018 18th European …, 2018 - ieeexplore.ieee.org
Total ionizing dose effect in LDMOS oxides and devices
T Borel, S Furic, E Leduc, A Michez… - IEEE Transactions on Nuclear Science, 2019 - ieeexplore.ieee.org
Thermal runaway in SiC Schottky barrier diodes caused by heavy ions
S Kuboyama, E Mizuta, Y Nakada… - IEEE Transactions on Nuclear Science, 2019 - ieeexplore.ieee.org
Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET
K Niskanen, AD Touboul… - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Etude expérimentale et modélisation des phénomènes de cellules fragilisées dans les DRAM en environnement radiative.
TH Nguyen - 2021 - theses.fr
Single Event Latchup: temperature effects, design parameters effects and mechanisms
S Guagliardo - 2021 - theses.fr
Neutron-induced failure dependence on reverse gate voltage for SiC power MOSFETs in atmospheric environment
K Niskanen, RC Germanicus, A Michez… - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org.
Predictive tools and" Radiation Hardening By Design"(RHBD)-SEL and Temperature Effects
Ygor Quadros de Aguiar - 2021 - theses.fr
Investigation of single event effects observed in SiC-SBDs
Y Nakada, E Mizuta, S Kuboyama, H Shindou - nishina.riken.jp
Single-event radiation effects in silicon carbide power MOSFETs
C Martinella - JYU dissertations, 2021 - jyx.jyu.fi
Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells
Cleiton M Marques, Frédéric Wrobel, Ygor Q Aguiar, Alain Michez, Frédéric Saigné, Jérôme Boch, Luigi Dilillo, Rubén García Alía, 2024, Electronics
Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation.
AFM-sMIM characterization of the recombination-enhancing buffer layer for bipolar degradation free SiC MOSFETs
Rosine Coq Germanicus, Tanguy Phulpin, Kimmo Niskanen, Alain Michez, Ulrike Lüders, 2024, Solid State Phenomena
Due to the expansion of defects like single Shockley-type Stacking Faults inside the SiC epitaxial drift layer, during high current stress, classical SiC MOSFETs can be victims of the degradation of their electrical characteristics. The introduction of an epitaxial SiC buffer layer between the substrate and the n-drift epilayer, called recombination-enhancing buffer layer, was shown to avoid this degradation. In this paper, TCAD simulations of the electrical behavior of such a commercial SiC MOSFET device with varying buffer layer thickness are studied, indicating only small modifications of the electrical characteristics. These simulations are combined with the characterization of the local electrical properties using an AFM-sMIM technique, allowing to determine the real thickness of the different layers of the device. These measurements highlight an inhomogeneous conductivity in the SiC substrate, being probably compensated by the introduction of the SiC buffer layer.
Ga-Free T2SL Infrared Detector Under Proton Irradiations: Identification of Dark Current Regimes.
Hassen Mezouar, Alain Michez, Clara Bataillon, Matthias Tornay, Philippe Christol, 2025, IEEE Transactions on Nuclear Science
The purpose of this work is to study the effects of proton irradiation on the dark current of InAs/InAsSb type-II superlattice (T2SL) midwave infrared barrier photodetectors. 60 MeV proton irradiation with fluence up to 8x1011 H+/cm² was applied to the detector maintained at its operating temperature of 150 K. A degradation of dark current is observed under proton irradiation due to displacement damage dose effects. Thanks to TCAD simulations, we identify the different dark current regimes. At high reverse voltage, the device is dominated by Fowler-Nordheim (FN) current and trap assisted tunneling (TAT).
Single Event Effects of SiC power MOSFETs: from neutron interaction to destruction at the die level
Rosine Coq Germanicus, Alain Michez, Kimmo Niskanen, Mahima Chaudhary, Guillaume Bascoul, Vanessa Chazal, Frederic Wrobel, Jerome Boch, 2025, IEEE Transactions on Nuclear Science
The impact of irradiation poses a significant barrier to the deployment of commercial off-the-shelf (COTS) Silicon Carbide (SiC) devices, such SiC MOSFETs, in harsh environments, such as space, avionics, and nuclear settings. Incident particles can induce secondary ion and generate, at the SiC die level, catastrophic events, such Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). With the goal of better elucidating the distinct stages occurring during irradiation, Technology Computer-Aided Design Single Event Effect (SEE) simulations of the SiC MOSFET, using ECORCE, were performed for both a heavy ion and a secondary ion created by neutron nuclear reactions. To more comprehensively account for all mechanisms linking particle interactions to device failure, the influence of two ion impact positions, beneath the gate and beneath the source, is evaluated.
Physical Explanation for the Higher Sensitivity to Ion-Induced Burnout in SiC Schottky Diodes Compared to Si Schottky Diodes
CM Marques, Alain Michez, Frédéric Wrobel, S Kuboyama, Frédéric Saigné, L Dillilo, YQ Aguiar, Rubén García Alía, 2025, IEEE Transactions on Nuclear Science
SiC has a higher critical electric field compared to Si, which is promising for power applications. However, the susceptibility of SiC Schottky barrier diodes (SBDs) to heavy ions is recognized as a critical issue due to Single Event Burnout (SEB) and Single Event Leakage Current (SELC). Despite extensive research, a comprehensive understanding of the main mechanisms underlying heavy ion-induced failures in SiC devices remains missing. This work compares the physical mechanisms in SiC and Si Schottky diodes using TCAD modeling. The results show that the high critical electric field, a key advantage of SiC devices, is also the primary factor behind their susceptibility to heavy ion irradiation. In Si diodes, impact ionization limits the electric field, reducing Joule heating and mitigating burnout risk.
Physics-Based Ion Track Structure Model for Single-Event Effect Simulations on Power Devices
Manami Iwata, Satoshi Kuboyama, Alain Michez, Akiko Makihara, Misa Takahashi, Norio Nemoto, Masahiko Midorikawa, Jérôme Boch, Frédéric Saigné, Frédéric Wrobel, Takahiro Makino, Takeshi Ohshima, Hiroyuki Shindou 2025 - IEEE Transactions on Nuclear Science
A physics-based ion track structure was successfully established for ions covering a wide LET range applicable to single-event effect simulations on power devices by modeling the power law profile, which was derived from Geant4 simulation with MicroElec extension. The collected charge in two different types of SiC diodes calculated by the device simulator ECORCE is in good agreement with the experimental results at the low bias condition.
SEU Cross-Section Estimation Using ECORCE TCAD Tool
Cleiton M Marques, Alain Michez, Frédéric Wrobel, Ygor Q Aguiar, Frédéric Saigné, Luigi Dilillo, Rubén García Alía - 2025 - Electronics
This work introduces an innovative approach for estimating the Single-Event Upset (SEU) cross-sections in Static Random-Access Memory (SRAM) devices, addressing challenges related to limited technological information and the complexity of Technology Computer-Aided Design (TCAD) simulations. The proposed methodology is designed to be accessible even to users without in-depth TCAD expertise, enabling a streamlined yet accurate SEU cross-section estimation. Using simplified mixed-modeling (TCAD-based 2D modeling with circuit-level SPICE simulations), this approach significantly reduces computational efforts while maintaining good correlation with experimental data. Furthermore, this study identifies key parameters that influence TCAD modeling accuracy and proposes strategies for approximating unknown parameters, enhancing the reliability of SEU cross-section predictions.
